BC161
BC160
January 1989
GENERAL PURPOSE TRANSISTORS
The BC160, and BC161 are silicon planar epitaxial
PNP transistors in TO-39 metal case.They are par-
ticurlarly designed for audio amplifiers and switching
applications up to 1A. The complementary NPN
types are the BC140 and BC141.
ABSOLUTE MAXIMUM RATINGS
Val ue
Symbol
Parameter
BC160
BC161
Unit
VCBO
Collector-base Voltage (IE =0)
40
60
V
VCEO
Collector-emitter Voltage (IB =0)
40
60
V
VEBO
Emitter-base Voltage (I C =0)
5
V
I C
Collector Current
1
A
I B
Base Current
0.1
A
Pto t
Total Power Dissipation at T amb 45 °C
at T cas e
45 °C
0.65
3.7
W
W
T stg
Storage Temperature
55 to 175
°C
T j
Junction Temperature
175
°C
DESCRIPTION
TO-39
INTERNAL SCHEMATIC DIAGRAM
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ELECTRICAL CHARACTERISTICS (T amb =25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I CE S
Collector Cutoff
Current (IE =0)
VCE S =40 V
VCE S =60 V
VCE S =40 V
T amb =150
°C
VCE S =60 V
T amb =150
°C
for BC160
for BC161
for BC160
for BC161
100
100
100
100
nA
nA
µA
µA
V(B R)CBO
Collector-base
Breakdown Voltage
(IE =0)
I C = 100 µA
for BC160
for BC161
40
60
V
V
V(BR)CE O *
Collector-emitter
Breakdown Voltage
(IB =0)
I C = 10 mA
for BC160
for BC161
40
60
V
V
V(B R)E BO
Emitter-base
Breakdown Voltage
(IC =0)
I E = 100
µA 5
V
VCE(sat)*
Collector-emitter
Saturation Voltage
I C = 0.1 A
I C = 0.5 A
I C = 1A
I B = 10 mA
I B = 50 mA
I B = 0.1 A
0.1
0.35
0.6
1
V
V
V
VBE *
Base-emitter Voltage
IC = 1A
VCE = 1V
1
1.7
V
h FE*
DC Current Gain
I C = 100 µA
I C = 100 mA
VCE = 1V
for BC160-161
for BC160-161 Gr. 6
for BC160-161 Gr. 10
for BC160-161 Gr. 16
VCE = 1V
for BC160-161
for BC160-161 Gr. 6
for BC160-161 Gr. 10
for BC160-161 Gr. 16
40
40
63
100
110
46
80
120
140
63
100
160
250
100
160
250
h FE*
DC Current Gain
I C = 1A
VCE = 1V
for BC160-161
for BC160-161 Gr. 6
for BC160-161 Gr. 10
for BC160-161 Gr. 16
26
15
20
30
f T
Transition Frequency
I C = 50 mA
VCE = 10 V
50
MHz
C CBO
Collector-base
Capacitance
I E =0
f= 1 MHz
VCB = 20 V
15
30
pF
C EBO
Emitter-base
Capacitance
VEB = 0.5 V
f = 1 MHz
180
pF
t on
Turn-on Time
I C = 100 mA
I B1 = 5mA
500
ns
t off
Turn-off Time
I C = 100 mA
I B1 =IB2 = 5mA
650
ns
* Pulsed : pulse duration = 300
µs, duty cycle = 1 %.
THERMAL DATA
Rth j-c ase
R th j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
35
200
°C/W
°C/W
BC160-BC161
2/5
Collector-emitter Saturation Voltage.
Base-emitter Voltage.
DC Current Gain.
Transition Frequency.
BC160-BC161
3/5
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
12.7
0.500
B
0.49
0.019
D
6.6
0.260
E
8.5
0.334
F
9.4
0.370
G
5.08
0.200
H
1.2
0.047
I
0.9
0.035
L45
o (typ.)
L
G
I
DA
F
E
B
H
TO39 MECHANICAL DATA
P008B
BC160-BC161
4/5
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
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BC160-BC161
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